AO4606,AO4606場效應(yīng)管參數(shù),AO4606參數(shù)規(guī)格書,AO4606代換
AO4606場效應(yīng)管,NMOS+PMOS管AO4606參數(shù)資料,AO4606引腳圖,AO4606中文資料規(guī)格書PDF
AO4606場效應(yīng)管,NMOS+PMOS管AO4606參數(shù)資料,AO4606引腳圖,AO4606中文資料規(guī)格書PDF
AO4606/SOP-8/SOIC-8封裝參數(shù):點(diǎn)擊查看
AO4606場效應(yīng)管參數(shù)具體如下:
極性:NMOS+PMOS
Drain-Source Voltage 漏源電壓Vds:30V
Continuous Drain Current 漏極電流Id Tc=25℃:6A
Continuous Drain Current 漏極電流Id Tc=25℃:6A
Gate-Source Voltage 柵源電壓Vgs:±20V
Power Dissipation 功率損耗Pd Ta=25℃:2W
Power Dissipation 功率損耗Pd Ta=25℃:2W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=6A,VGS=10V: Typ 20mΩ Max 30mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=5A,VGS=4.5V:Typ 33.5mΩ Max 42mΩ
Drain-Source Voltage 漏源電壓Vds:-30VContinuous Drain Current 漏極電流Id Tc=25℃:-5.5A
Gate-Source Voltage 柵源電壓Vgs:±20V
Gate-Source Voltage 柵源電壓Vgs:±20V
Power Dissipation 功率損耗Pd Ta=25℃:2W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-6.5A,VGS=-10V: Typ 40mΩ Max 48mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-5A,VGS=-4.5V:Typ 34mΩ Max 44mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
AO4606場效應(yīng)管SOP-8/SOIC-8封裝尺寸:
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